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Step-Down DC/DC Controller
Target Datasheet Features * * * * * * * * * * * * Operation from 5V to 60V Input Voltage 100% Maximum Duty Cycle Efficiency >90% Output Current up to 3A Less than 100A Quiescent Current 2A Max Shutdown Current Up to 350kHz Switching Frequency Adjustable and Fixed 5V and VIN 3.3V Output Voltage versions 3% output voltage accuracy (PWM Mode) Current-Mode Control Scheme On Chip Low Battery Detector Ambient operation range -40C to 125C R=
SI1
TLE 6389
P-DSO-14-3, -4, -9, -11
RSENSE= 0.05
M1
L1 = 47 H
VOUT IOUT
CIN1 = 100 F
CBDS= 220 nF
11 13 BDS VS 7 SI CS 14 12 GDRV 2
D1
100 F
COUT =
400k RSI2= 100k
CIN2 = 220nF
TLE6389G50-1
SYNC GND 5 4 6 ON 1 OFF
3 FB VOUT 9 SO 10 RO RD 8
M1: Infineon SPD09P06PL D1: Motorola MBRD360 L1: Coilcraft DO3340P-473 Cin1: TBD Cout: Low ESR Tantalum
SI_GND SI_ENABLE
CRD =100nF
Type TLE 6389 GV TLE 6389 G50 TLE 6389 G50-1 TLE 6389 G33 TLE 6389 G33-1
Ordering Code on request on request on request on request on request
Package P-DSO-14 P-DSO-14 P-DSO-14 P-DSO-14 P-DSO-14
Description adjustable 5V, Device Enable 5V, SI GND, SI Enable 3.3V, Device Enable 3.3V, SI GND, SI Enable
Functional description The TLE6389 step-down DC-DC switching controllers provide high efficiency over loads ranging from 1mA up to 3A. A unique PWM/PFM control scheme operates with up to a 100% duty cycle, resulting in very low dropout voltage. This control scheme eliminates minimum load requirements and reduces the supply current under light loads to 100A. These step-down controllers drive an external P-channel MOSFET, allowing design flexibility for applications up to 3A. A high switching frequency (up to 350kHz) and
Target Datasheet Rev. 1.7 1 2001-09-17
TLE 6389
operation in continuous-conduction mode allow the use of tiny surface-mount inductors. Output capacitor requirements are also reduced, minimizing PC board area and system costs. The output voltage is preset at 5V (TLE6389-50) or 3.3V (TLE6389-33) and adjustable for the TLE6389. Input voltages can be up to 60V.
Pin Configuration (top view)
ENABLE / 1 SI_EN FB 2 VOUT 3 GND 4 SYNC 5 SI_GND 6 SI 7 14 CS 13 VS 12 GDRV
P-D-SO-14
11 BDS 10 RO 9 SO 8 RD
Pin Definitions and Functions
Pin No SO-14 2 Symbol FB Function Feedback Input. 1. For adjustable-output operation connect to an external voltage divider between the output and GND (see the Setting the Output Voltage section). 2. Sense input for fixed 5V or 3.3V output operation. FB is internally connected to an on-chip voltage divider. VOUT Input. Input for internal supply. Connect to output if variable version is used. For fixed voltage version connect FB and VOUT.
3
VOUT
1
ENABLE Active-Low Enable Input. Device is placed in shutdown when Enable is driven low. In shutdown mode, the reference, output, and external MOSFET are turned off. Connect to logic high for normal operation. (TLE6389G50, TLE6389G33, TLE6389GV only)
Target Datasheet Rev. 1.7
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TLE 6389
Pin No SO-14 1
Symbol SI_ENA BLE
Function SI Enable Input. SI_GND is switched to high impedance when SI_Enable is low. High level at SI_Enable connects SI_GND to GND via a low impedance path. SO is undefined when SI_Enable is low. (TLE6389G501, TLE6389G33-1 only) Supply Input. Bypass with 0.47F. Ground. Analog signal ground. SI Ground. Ground connection for SI comparator resistor devider. Buck Driver Supply Input. Connect ceramic capacitor between BDS and VS to generate clamped gate-source voltage to drive the PMOS power stage. Current-Sense Input. Connect current-sense resistor between VS and CS. External MOSFET is turned off when the voltage across the resistor equals the current-limit trip level. Gate Drive Output for External P-Channel MOSFET. GDRV swings between VS and BDS. Reset Output. Open drain output from reset comparator with an internal pull up resistor. Reset Delay. Connect a capacitor to ground for delay time adjustment. Sense Output Comparator. Open drain output from SI comparator with an internal pull up resistor. Sense Input Comparator. Input to the Low-Battery Comparator. This input is compared to an internal 1.25V reference. Input for external synchronization. An external clock signal connected to this pin allows for GDRV switching synchronization.
13 4 6 11
VS GND SI_GND BDS
14
CS
12 10 8 9 7 5
GDRV RO RD SO SI SYNC
Target Datasheet Rev. 1.7
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TLE 6389
1 Item
Absolute Maximum Ratings Parameter Supply Input Symbol Limit Values Unit min. max. 60 - 60 - 6.8 - 55 - 6.8 - 6.8 Remarks
1.0.1 1.0.2 1.0.3 1.0.4 1.0.5 1.0.6 1.0.7 1.0.8 1.0.9 1.0.10 1.0.11
Voltage Current Current Sense Input Voltage Current Gate Drive Output Voltage Current Voltage Current Feedback Input Voltage Current SI_Enable Input Voltage
VS IS VCS ICS
VGDRV
-0.3 - -0.3 - - 0.3 - - 0.3 - - 0.3 -
V
-
-
V
- V - V - V - V
-
|VS - VGDRV|<6.8V Internally limited |VS - VBDS|<6.8V
IGDRV
VBDS
Buck Drive Supply Input
IBDS
VFB
IFB
VSI_ENAB - 0.3
LE
(TLE6389G50-1, TLE6389G33-1 only)
1.0.12
Current SI_GND Input
ISI_ENABL -
E
-
-
1.0.13
Voltage
VSI_GND
- 0.3
60
V
(TLE6389G50-1, TLE6389G33-1 only)
1.0.14
Current
ISI_GND
-
-
-
Enable Input
Target Datasheet Rev. 1.7
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TLE 6389
1 Item 1.0.15
Absolute Maximum Ratings (cont'd) Parameter Voltage Symbol VENABLE Limit Values Unit min. - 0.3 max. 60 V
(TLE6389G50, TLE6389G33, TLE6389GV only)
Remarks
1.0.16 1.0.17 1.0.18 1.0.19 1.0.20 1.0.21 1.0.22 1.0.23 1.0.24 1.0.25 1.0.26 1.0.27 1.0.28
Current Sense Input Voltage Current Sense Output Voltage Current VOUT Input Voltage Current Voltage Current Reset Output Voltage Current Synchronization Input Voltage Current
IENABLE
VSI
- - 0.3 - - 0.3 - - 0.3 - - 0.3 TBD - 0.3 -2 - 0.3 TBD
- 60 - 6.8 - 15 - 6.8 TBD 6.8 2 6.8 TBD
- V - V - V - V mA V mA V mA
ISI
VSO
ISO
VOUT
IOUT
VRD
Reset Delay Adjust Input
IRD
VRO
IRO
VSYNC
ISYNC
ESD-Protection (Human Body Model; R=1,5k; C=100pF) 1.0.29 all pins to GND
VHBM
-2
2
kV
Target Datasheet Rev. 1.7
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TLE 6389
1 Item
Absolute Maximum Ratings (cont'd) Parameter Symbol Limit Values Unit min. Temperatures max. Remarks
1.0.30 1.0.31
Junction temperature Storage temperature
Tj Tstg
- 40 - 50
150 150
C C
- -
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.
Target Datasheet Rev. 1.7
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TLE 6389
2 Item 2.0.1 2.0.2
Operating Range Parameter Supply voltage range Junction temperature Thermal Resistance Symbol VS Limit Values min. 5 - 40 max. 48 150 V C Unit Remarks
Tj
2.0.3 2.0.4
Junction ambient Junction pin
Rthj-a Rthj-p
180 TBD
K/W K/W
- -
3
Electrical Characteristics
5V< VS <48V; - 40C< Tj <150C;
all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified
Item
Parameter
Symbol
Limit Values min. typ. max.
Unit Test Condition
Current Consumption1) TLE6389 (variable) 3.0.1 Supply current into VS IS 80 A
VS = 13.5 V; VENABLE = 5 V;
IOUT = 0 mA; TJ = 25 C;
3.0.2
110
A
VS = 42 V; VENABLE = 5 V;
IOUT = 0 mA; TJ = 25 C;
3.0.3 3.0.4 FB current IFB
2 4
A A
VENABLE=0V
VENABLE = 5 V;
TJ = 25 C;
Target Datasheet Rev. 1.7
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TLE 6389
3
Electrical Characteristics (cont'd)
5V< VS <48V; - 40C< Tj <150C;
all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified
Item
Parameter
Symbol
Limit Values min. typ. max.
Unit Test Condition
Current Consumption TLE6389-50 3.0.5 Supply current into VS IS 50 A
VS = 13.5 V; VENABLE = 5 V;
IOUT = 0 mA; TJ = 25 C;
3.0.6
80
A
VS = 42 V; VENABLE = 5 V;
IOUT = 0 mA; TJ = 25 C;
3.0.7 3.0.8 FB current IFB
2 50
A A
VENABLE=0V
VENABLE = 5 V; VOUT = 5 V;
TJ = 25 C;
Current Consumption TLE6389-33 3.0.9 Supply current into VS IS 80 A
VS = 13.5 V; VENABLE = 5 V;
IOUT = 0 mA; TJ = 25 C;
3.0.10
110
A
VS = 42 V; VENABLE = 5 V;
IOUT = 0 mA; TJ = 25 C;
3.0.11
2
A
VENABLE=0V
Current Consumption TLE6389-50-1
Target Datasheet Rev. 1.7
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TLE 6389
3
Electrical Characteristics (cont'd)
5V< VS <48V; - 40C< Tj <150C;
all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified
Item
Parameter
Symbol IS
Limit Values min. typ. max. 50
Unit Test Condition A
3.0.12 Supply current into VS 3.0.13
VS = 13.5 V;
IOUT = 0 mA; TJ = 25 C;
80
A
VS = 42 V;
IOUT = 0 mA; TJ = 25 C;
3.0.14 FB current
IFB
50
A
VOUT = 5 V;
TJ = 25 C;
Current Consumption TLE6389-33-1 3.0.15 Supply current into VS 3.0.16 IS 80 A
VS = 13.5 V;
IOUT = 0 mA; TJ = 25 C;
110
A
VS = 42 V;
IOUT = 0 mA; TJ = 25 C;
3.0.17 FB current
IFB
15
A
VOUT = 3.3 V;
TJ = 25 C;
Buck-Controller 3.0.18 Output voltage VOUT 4.85 5 5.15 V 5V Versions; VS = 5.8 V to 48V; IOUT = TBDmA to 2A (PWM Mode); RSENSE = 0.05; RM1 = 0.25;RL1 = 0.1;
Target Datasheet Rev. 1.7
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TLE 6389
3
Electrical Characteristics (cont'd)
5V< VS <48V; - 40C< Tj <150C;
all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified
Item
Parameter
Symbol VOUT
Limit Values min. typ. max. 5.25 4.75 5
Unit Test Condition V 5V Versions; VS = 5.8 V to 48V; IOUT = 0mA to TBDA (PFM Mode); RSENSE = 0.05; RM1 = 0.25;RL1 = 0.1; 5V Versions; VS = 4.2 V to 5.8V; IOUT = 0mA to 500mA; RSENSE = 0.1; RM1 = 0.4;RL1 = 0.1; 3.3V Versions; VS = 5 V to 48V; IOUT = TBD to 2A (PWM Mode); 3.3V Versions; VS = 5 V to 48V; IOUT = 0mA to TBD (PFM Mode); TLE6389GV TLE6389GV TBD IOUT = 5mA to 2A;
3.0.19 Output voltage
3.0.20
3.8
V
3.0.21 Output voltage
VOUT
-3%
3.3
+3% V
3.0.22
-5%
3.3
+5% V
3.0.23 FB threshold voltage 3.0.24 Output adjust range 3.0.25 Line regulation 3.0.26 Load regulation 3.0.27 Gate driver, P-gate to source voltage (off)
Target Datasheet Rev. 1.7
VFB,th
1.22 1.25 1.27 5 5 5 0.7 20 15 1 30 0.2
V V mV/ V mV/ A V
VGDRV - 0 VS
VENABLE = 5 V CBDS = 220 nF CGDRV = 5nF
2001-09-17
10
TLE 6389
3
Electrical Characteristics (cont'd)
5V< VS <48V; - 40C< Tj <150C;
all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified
Item
Parameter
Symbol
Limit Values min. typ. max. 6.5
Unit Test Condition V
3.0.28 Gate driver, P-gate to source voltage (on) 3.0.29 Gate driver, peak charging current 3.0.30 Gate driver, peak discharging current 3.0.31 Gate driver, rise time 3.0.32 Gate driver, fall time 3.0.33 Gate driver, gate charge 3.0.34 Current Limit Threshold Voltage 3.0.35 PWM to PFM Threshold Current 3.0.36 PFM to PWM Threshold Timing
VGDRV - TBD VS IGDRV
TBD
VENABLE = 5 V CBDS = 220 nF CGDRV = 5nF
A
IGDRV
TBD
A
tr
70
ns
tf
100
ns
VENABLE = 5 V CBDS = 220 nF CGDRV = 5nF VENABLE = 5 V CBDS = 220 nF CGDRV = 5nF
QGDRV VLIM = VVS - VCS
50 70 100 130
nC mV
0.1* ILIM
mA s 450 kHz % TBD %
ILIM = VLIM / RSENSE
toff_PFM
270 100 270
TBD 360
3.0.37 Oscillator frequency fOSC 3.0.38 Maximum duty cycle dMAX 3.0.39 Minimum duty cycle dMIN 3.0.40 SYNC capture range
PWM mode only PWM mode only PWM mode only PWM mode only
360
450
kHz
Target Datasheet Rev. 1.7
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2001-09-17
TLE 6389
3
Electrical Characteristics (cont'd)
5V< VS <48V; - 40C< Tj <150C;
all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified
Item
Parameter
Symbol
Limit Values min. typ. max.
Unit Test Condition
Reset Generator 3.0.41 Reset threshold
VRT
0.9* 1.25 100 3.5 4.5 3.65 3.8 4.65 4.8 2.95 3.1 3.05 3.2 20 40
V
TLE6389GV only; VOUT decreasing TLE6389GV only 5V Versions; VOUT decreasing 5V Versions; VOUT increasing 3.3V Versions; VOUT decreasing 3.3V Versions; VOUT increasing 3.3V and 5V Versions; Internally connected to
3.0.42 Reset threshold hysteresis 3.0.43 Reset threshold 3.0.44 3.0.45 Reset threshold 3.0.46 3.0.47 Reset pull up
VRT,hys VRT
mV V V V V k
VRT
2.8 2.9
RRO
10
VOUT
3.0.48 Reset output High voltage 3.0.49 Reset output Low voltage 3.0.50 VROH 0.8* V
VOUT
VROL 0.2 0.4 V
3.3V and 5V Versions;IROH=0 mA IROL=1mA; 2.5V < VOUT <
VRT
0.2 0.4 V IROL=0.2mA; 1V < VOUT < 2.5V VD = 1V
3.0.51 Reset delay charging current
Id
4
A
Target Datasheet Rev. 1.7
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2001-09-17
TLE 6389
3
Electrical Characteristics (cont'd)
5V< VS <48V; - 40C< Tj <150C;
all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified
Item
Parameter
Symbol VRDO VRDL td trr tROd
Limit Values min. typ. max. tbd tbd 35 50 70 10 1
Unit Test Condition V V ms s s ---
3.0.52 Upper reset timing threshold 3.0.53 Lower timing threshold 3.0.54 Reset delay time 3.0.55 Reset reaction time 3.0.56 Reset Output delay ENABLE Input 3.0.57 Enable ONthreshold 3.0.58 Enable OFFthreshold
CRD = 100nF CRD = 100nF CRD = 100nF
VENABLE, 2
ON
V 0.8 5 2 V A A
VENABLE,
OFF
3.0.59 H-level input current IENABLE,O
N
3.0.60 L-level input current IENABLE,O
FF
SI_ENABLE Input 3.0.61 Enable ONthreshold 3.0.62 Enable OFFthreshold VENABLE, 2
ON
V 0.8 5 V A
VENABLE,
OFF
3.0.63 H-level input current IENABLE,O
N
Target Datasheet Rev. 1.7
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TLE 6389
3
Electrical Characteristics (cont'd)
5V< VS <48V; - 40C< Tj <150C;
all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified
Item
Parameter
Symbol
Limit Values min. typ. max. 2
Unit Test Condition A
3.0.64 L-level input current IENABLE,O
FF
SI_GND Input 3.0.65 Switch ON resistance RSW 100 Tj=25C; ISI_GND = TBDuA
Battery Voltage Sense 3.0.66 Sense threshold high to low 3.0.67 Sense threshold hysteresis 3.0.68 S ense out pull up
Vsi, high Vsi, hys
RSO
1.13 1.25 1.37 - 10 100 20 - 40
V mV k - 3.3V and 5V Versions; Internally connected to
VOUT
3.0.69 Sense out output High voltage 3.0.70 Sense out output Low voltage 3.0.71 VSOH VSOL 0.8* V 0.2 0.4 V ISOH =0mA ISOL=1mA; 2.5V < VOUT; VSI < 1.13 V ISOL=0.2mA; 1V VOUT
0.2
0.4
V
3.0.72 Sense input current Thermal Shutdown
ISI
-1
0.1
1
A
Target Datasheet Rev. 1.7
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2001-09-17
TLE 6389
3
Electrical Characteristics (cont'd)
5V< VS <48V; - 40C< Tj <150C;
all voltages with respect to ground; positive current defined flowing into the pin; unless otherwise specified
Item
Parameter
Symbol
Limit Values min. typ. max. 150 175 200
Unit Test Condition C
3.0.73 Thermal shutdown junction temperature 3.0.74 Temperature hysteresis
1)
TjSD
DT
30
K
The device IS and IFB current measurements exclude MOSFET driver currents. Contribution of MOSFET driver currents are discussed in application section.
Target Datasheet Rev. 1.7
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TLE 6389
4
Detailed Description
The TLE6389 family is a family of step-down DC-DC controllers designed primarily for use in high voltage applications such as automotive. Using an external MOSFET and current-sense resistor allows design flexibility and the improved efficiencies associated with high-performance P-channel MOSFETs. A unique, current-limited, pulse-width (PWM)/pulse-frequency-modulated (PFM) control scheme gives these devices excellent efficiency over load ranges up to three decades, while drawing less than 100A under no load. This wide dynamic range optimizes the TLE6389 for automotive applications, where load currents can vary considerably as individual circuit blocks are turned on and off to conserve energy. Operation to a 100% duty cycle allows the lowest possible dropout voltage, allowing operation during cold cranking. High switching frequencies and a simple circuit topology minimize PC board area and component costs. The output voltage is sensed either by an internal voltage divider connected to the FB pin (TLE6389-50 and TLE6389-33) or an external divider returned to the FB pin (TLE6389).
VIN
RSENSE= 0.05
M1
L1 = 47 H
VOUT IOUT
CIN1 = 100 F
CBDS= 220 nF
11 13 BDS VS 7 CS 14 12 GDRV 2
D1
COUT = 100 F
RSI1= 400k RSI2= 100k
CIN2 = 220nF
TLE6389G50
SI SI_GND ENABLE 6 ON 1 OFF SYNC 5 GND 4
3 FB VOUT 9 SO 10 RO RD 8
M1: Infineon SPD09P06PL D1: Motorola MBRD360 L1: Coilcraft DO3340P-473 Cin1: TBD Cout: Low ESR Tantalum
CRD =100nF
TLE6389G50 Application Circuit
Target Datasheet Rev. 1.7
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2001-09-17
TLE 6389
VIN
RSENSE= 0.05
M1
L1 = 47 H
VOUT
CIN1 = 100 F
CBDS= 220 nF
11 13 BDS VS CS 14 12 GDRV
D1
RSO= 20k
RRO= 20k
COUT = 100 F
3 VOUT SO RO FB 2 9 10
RSI1= 400k RSI2= 100k
CIN2 = 220nF
7
TLE6389GV
SI SI_GND ENABLE 6 ON 1 OFF SYNC GND 5 4
RFB1= TBDk RFB2= 47k
RD 8
CRD =100nF
M1: Infineon SPD09P06PL D1: Motorola MBRD340 L1: Coilcraft DO3340P-473 Cin1: TBD Cout: Low ESR Tantalum
TLE6389GV Application Circuit
VIN
RSENSE= 0.05
M1
L1 = 47 H
VOUT IOUT
CIN1 = 100 F
CBDS= 220 nF
11 13 BDS VS 7 SI CS 14 12 GDRV 2
D1
COUT = 100 F
RSI1= 400k RSI2= 100k
CIN2 = 220nF
TLE6389G50-1
SYNC GND 5 4 6 ON 1 OFF
3 FB VOUT 9 SO 10 RO RD 8
M1: Infineon SPD09P06PL D1: Motorola MBRD360 L1: Coilcraft DO3340P-473 Cin1: TBD Cout: Low ESR Tantalum
SI_GND SI_ENABLE
CRD =100nF
TLE6389G50-1 Application Circuit
Target Datasheet Rev. 1.7
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TLE 6389
4.1 4.1.1
Operating Modes PWM Control Scheme
The TLE6389 uses a slope-compensated, current-mode PWM controller capable of achieving 100% duty cycle. The device uses an oscillator-triggered, minimum on-time, current-mode control scheme. The minimum on-time is approximately 200ns unless in dropout. The maximum on-time is greater than 1/fOSC, allowing operation to 100% duty cycle. Current-mode feedback provides cycle-by-cycle current limiting for superior loadand line-response and protection of the external MOSFET and rectifier diode. At each falling edge of the internal oscillator, the oscillator cell sends a PWM ON signal to the control and drive logic, turning on the external P-channel MOSFET. This allows current to ramp up through the inductor to the load, and stores energy in a magnetic field. The switch remains on until either the current-limit comparator is tripped or the PWM comparator signals that the output is in regulation. When the switch turns off during the second half of each cycle, the inductor's magnetic field collapses, releasing the stored energy and forcing current through the rectifier diode to the output-filter capacitor and load. The output-filter capacitor stores charge when the inductor current is high and releases it when the inductor current is low, thus smoothing the voltage across the load. During normal operation, the TLE6389 regulates output voltage by switching at a constant frequency and then modulating the power transferred to the load each cycle using the PWM comparator. A multi-input comparator sums three weighted differential signals: the output voltage with respect to the reference, the main switch current sense, and the slope-compensation ramp. It modulates output power by adjusting the inductorpeak current during the first half of each cycle, based on the output-error voltage. 4.1.2 100% Duty-Cycle Operation and Dropout
The TLE6389 operates with a duty cycle up to 100%. This feature extends allows to operate with the lowest possible drop at low battery voltage as it occurs at cold ambient temperatures. The MOSFET is turned on continuously when the supply voltage approaches the output voltage. This services the load when conventional switching regulators with less than 100% duty cycle would fail. Dropout voltage is defined as the difference between the input and output voltages when the input is low enough for the output to drop out of regulation. Dropout depends on the MOSFET drain-to-source onresistance, current-sense resistor, and inductor series resistance, and is proportional to the load current: Dropout Voltage = IOUT x (RDS(ON) + RSENSE + RINDUCTOR)
Target Datasheet Rev. 1.7
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TLE 6389
4.1.3
PWM/PFM Operation
This control scheme overrides PWM mode and places the TLE6389 in PFM mode at light loads to improve efficiency and reduce quiescent current to less than 100A. The pulse-skipping PFM operation is initiated when the peak inductor current drops below 0.1 x Ilimit. During PFM operation, the TLE6389 switches only as needed to service the load, reducing the switching frequency and associated losses in the external switch, the rectifier diode, and the external inductor. During PFM mode, a switching cycle initiates when the PFM comparator senses that the output voltage has dropped too low. The Pchannel MOSFET switch turns on and conducts current to the output-filter capacitor and load until the inductor current reaches the PFM peak voltage limit. Then the switch turns off and the magnetic field in the inductor collapses, forcing current through the synchronous rectifier to the output filter capacitor and load. Then the TLE6389 waits until the PFM comparator senses a low output voltage again. Output ripple is higher during PFM operation. A larger output-filter capacitor can be used to minimize ripple. 4.2 SYNC Input and Frequency Control
The TLE6389's internal oscillator is set for a fixed-switching frequency of 360kHz or can be synchronized to an external clock. Do not leave SYNC unconnected. Connecting SYNC to GND enables PWM/PFM operation to reduce supply current at light loads. SYNC is a negative-edge triggered input that allows synchronization to an external frequency ranging between 270kHz and 450kHz. When SYNC is clocked by an external signal, the converter operates in PWM mode until the load current drops below the PWM to PFM threshold. Thereafter the converter continues operation in PFM mode.
4.3
Shutdown Mode
Connecting ENABLE to GND places the TLE6389GV, TLE6389G33 and TLE6389G50 in shutdown mode. In shutdown, the reference, control circuitry, external switching MOSFET, and the oscillator are turn off and the output falls to 0V. Connect ENABLE to IN for normal operation. 4.4 SI_Enable
Connecting SI_ENABLE to 5V causes SI_GND to have low impedance. Thus the SI comparator is operational and ca be used to monitor the battery voltage. SO output signal is valid. Connecting SI_ENABLE to GND causes SI_GND to have high impedance. Thus the SI comparator is not able to monitor the battery voltage. SO output signal is invalid.
Target Datasheet Rev. 1.7
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TLE 6389
4.5
Quiescent Current
The device's typical quiescent current is 50A. However, actual applications draw additional current to supply MOSFET switching currents, FB pin current, or external feedback resistors (if used), and both the diode and capacitor leakage currents. For example, with VS at 13.5V and VOUT at 5V, typical no-load supply current for the entire circuit is TBDA. When designing a circuit for high-temperature operation, select a Schottky diode with low reverse leakage.
5 5.1
Application Information Output Voltage Selection (TLE6389GV only)
Select an output voltage between 5V and 15V by connecting FB to a resistor-divider between the output and GND. Select feedback resistor R2 in the 5k to 500k range. R1 is then given by: R1 = R2 [(VOUT / VFB) - 1] where VFB = 1.25V. Add a small ceramic capacitor around 47pF to 100pF in parallel with R1 to compensate for stray capacitance at the FB pin and output capacitor equivalent series resistance (ESR). 5.2 Output Capacitor Selection
Choose input- and output-filter capacitors to service inductor currents with acceptable voltage ripple. The input-filter capacitor also reduces peak currents and noise at the voltage source. In addition, connect a low-ESR bulk capacitor (>10F suggested) to the input. Select this bulk capacitor to meet the input ripple requirements and voltage rating, rather than capacitor size. Use the following equation to calculate the maximum RMS input current: IRMS = IOUT[VOUT (VIN - VOUT)]1/2 * VIN When selecting an output capacitor, consider the output- ripple voltage and approximate it as the product of the ripple current and the ESR of the output capacitor. VRIPPLE = [VOUT (VIN - VOUT)] / [2 * fOSC(L) (VIN)] * ESRCOUT where ESRCOUT is the equivalent-series resistance of the output capacitor. Higher values of COUT provide improved output ripple and transient response. Lower oscillator frequencies require a larger-value output capacitor. Verify capacitor selection with light loads during PFM operation, since output ripple is higher under these conditions. LowESR capacitors are recommended. Capacitor ESR is a major contributor to output ripple (usually more than 60%). Ordinary aluminum-electrolytic capacitors have high ESR and should be avoided. Low-ESR aluminum-electrolytic capacitors are acceptable and relatively inexpensive. Low-ESR tantalum capacitors are better and provide a compact
Target Datasheet Rev. 1.7 20 2001-09-17
TLE 6389
solution for space-constrained surface-mount designs. Do not exceed the ripple-current ratings of tantalum capacitors. Ceramic capacitors have the lowest ESR overall.
Target Datasheet Rev. 1.7
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TLE 6389
6
Package Outlines Dimensions in mm
Target Datasheet Rev. 1.7
22
2001-09-17
TLE 6389
Published by Infineon Technologies AG, St.-Martin-Strasse 53 D-81541 Munchen
(c) Infineon Technologies AG2000
All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologiesis an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Target Datasheet Rev. 1.7
23
2001-09-17
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